The Hangjia Talk 3.5Gen Annual Conference “2023 Silicon Carbide & Gallium Nitride Industry Summit Forum and Aurora Award Ceremony” was held in Shenzhen between December 13-14, 2023. YASC was recognized as one of Aurora Award “China’s Top 10 SiC Device IDMs” for its outstanding performance in the silicon carbide (SiC) field in 2023.

Hangjia Talk, a representative leading media and industry research firm in the third-generation semiconductor industry, launched the “2023 Hangjia Aurora Award” in September 2023, which recognizes excellent enterprises as industry examples in 2023, and innovative technologies and excellent products that lead industrial transformation. After months of intense selection, YASC successfully stood out from many participating enterprises and won the award, achieving wide recognition in the industry.

Today, the main business models of the third-generation semiconductor industry, represented by silicon carbide, can be divided into two major categories: integrated manufacturing (IDM) and vertical specialization. The IDM model, commonly adopted by international giants, is considered as a successful business model more suitable for third-generation semiconductors.

YASC, a representative silicon carbide IDM company in China, has managed to realize the business transformation from “Foundry” to “IDM” since May 2023. It has nowadays built the complete capabilities in the industrial chain from epitaxial growth, device design and wafer fabrication to module assembly and test, and fostered systematic product development, product management and business development capabilities. The company can offer 650V-3300V SiC SBD and SiC MOSFET products, widely covering new energy vehicle (NEV), photovoltaics, energy storage, charging station and power grid.

The YASC Wuhan Base construction kickoff meeting was recently held, and the project construction has nowadays moved fast and efficiently. The Wuhan Base construction includes a product development center, a technology innovation center and a manufacturing factory. In the first phase of the project expected to be completed in 2025, the base will build a fully intelligent world-class benchmark SiC device manufacturing factory, and become the largest SiC power semiconductor manufacturing base in China.

Every honor is an important force that motivates YASC to forge ahead. Taking this recognition as a new starting point, YASC will continuously accelerate the pace of independent product development and production, fuel rapid development of the Chinese silicon carbide industry, and provide customers with higher-quality, more comprehensive services.