The SiC Schottky barrier diode (SiC SBD) has the characteristics of high speed, high voltage tolerance and excellent reverse recovery time (Trr) with almost no temperature or current dependence, and thus can dramatically reduce conduction and reverse recovery loss, and realize high efficiency. YASC SiC Schottky barrier diode (SBD) series are available in 650V and 1200V voltage levels, and can be widely used in industrial power supplies, charging station, photovoltaics and energy storage applications.
