YASC

OEM services

Wafer Foundry

YASC has advanced SiC wafer process production and testing equipment, sophisticated process flows and complete process platforms, covering SiC epitaxial wafers and devices. It can provide a comprehensive set of process development and technical solutions, while offering one-stop foundry tape-out services based on customers’ needs.

Foundry Development Process

Available product categories

YASC provides customers with complete SBD and MOSFET foundry services, of which the MOSFET product category covers 650V, 1200V and 1700V (and above) voltage levels and the 2mΩ-200Ω on-resistance range.

MOSFET Type	Typical Parameter
MOSFET(1200V/15mΩ)	IDSS~5μA、IGSS~10nA、Vth 2.5~3V、Vsd 3.8~4.2V、BVDSS~1500V

Tool capability

Machine	Key Parameter
Photography	i-line, overlay accuracy 40 nm , resolution 0.35μm.
High Temperature Implantation	Dopant Al/N/P/B/BF2， Energy 10Kev~3.6Mev
High Temperature Anneal	Gas：Ar、N2，Max Temperature 1900℃
Oxidation	Gas: O2/N2/H2/NO2/NO/Ar，Temperature 700℃~1500℃
Rapid Thermal Anneal	Gas: Ar、N2，Max Temperature 1200℃
Defect Scan	Epitaxy，resolution 0.2μm，Visible Light， Photoluminescence In-line，resolution 0.1μm，Visible Light，Photoluminescence
Metrology	CD-SEM、OCD、SEM view & FIB、Ellipsometer、AFM、Alpha Stepper、FTIR
Electric Test	Prober(wafer thickness 100μm、175℃)、Tester(Max BV 10000V)、WLBI、KGD

Process capability

Process	Key Parameter
Photography	Min CD 0.35μm、Max PI thickness 13μm
Oxide Etch	Min CD 0.35μm、Profile ~90̊̊̊
Poly Etch	Min CD 0.35μm、Profile ~90̊̊̊、Selectivity Poly/Oxide=25/1
Metal Etch	Al/Cu 5μm、Spacing 5μm、Profile 70~90̊
Gate Oxide	HTGB Pass、TDDB Pass、Mobility~22cm²/Vs、Dit~3E11cm^-2eV^-1
Ohmic Contact	P-Contact Resistance 8E-3 Ω.cm^-2、N-Contact Resistance 5E-5Ω.cm^-2
Thinning	Thickness 150μm、Laser Anneal、Contact Resistance~6E-4Ω.cm^-2
SiC Trench	Min CD 0.8μm、Depth 2μm、No Micro Trench