The third generation of semiconductor materials, represented by silicon carbide (SiC), have the characteristics of high electron saturation rate, a wide bandgap, high breakdown field strength and high thermal conductivity. Compared with the first generation of silicon devices, SiC devices have the advantages of low switching loss, high operating junction temperature and high thermal conductivity. Therefore, power electronic converters using SiC devices can significantly increase the operating switching frequency, reduce the size of energy storage systems, filters and heat sinks, and achieve higher system efficiency and power density. YASC has a complete series of SiC products, including discrete SiC Schottky barrier diodes (SBDs), discrete SiC MOSFETs, SiC power modules, SiC MOSFET bare dies and SiC SBD bare dies, which can cover electric vehicle, industrial power supplies, photovoltaic inverter, energy storage system, wind power generation, rail transit and flexible power transmission fields.

Wafer Foundry：YASC has advanced SiC wafer process production and testing equipment, sophisticated process flows and complete process platforms, covering SiC epitaxial wafers and devices. It can provide a comprehensive set of process development and technical solutions, while offering one-stop foundry tape-out services based on customers’ needs.
Assembly and Test (AT) Foundry：YASC’s advanced Assembly and Test (AT) Foundry business has high-precision, highly automated production lines, as well as first-class production operation platforms, and can provide one-stop services from design to development to meet customers’ various customization needs.

YASC has first-class 6-inch production line equipment and advanced supporting systems in China, with an annual production capacity of 420,000 bare and epitaxial wafers. Wuhu Base can make 60,000 6-inch SiC MOSFET epitaxial products and wafers, 6.4 million power modules, and 18 million power single emitters annually; Wuhan Base can produce 360,000 6-inch SiC MOSFET epitaxial products and wafers, and 61 million power modules annually.

Moissanite Labs is a comprehensive laboratory facility integrating scientific research, testing and analysis that focuses on multiple fields such as research and industrial application of wide bandgap semiconductor SiC materials, as well as product reliability, failure analysis, feature testing and application testing. The Labs has several specialist laboratories including Material Lab, Chemical Analysis Lab,  Reliability Testing Lab, Failure Analysis Lab, Product Characterization Lab and Product Application Lab. With its professional scientific research team, advanced experimental equipment and complete service system, Moissanite Labs is committed to promoting technological progress and industrial upgrading in related industries.