The SiC MOSFET has the characteristics of high-speed switching, high temperature and voltage tolerance, and high reliability, and can achieve the advantages of reduced power consumption and energy saving, reduced system size and weight, and increased power density. YASC discrete SiC MOSFET device series are available in 750 V, 1200 V, 1700 V and 2000 V voltage levels, and in 12 mΩ-680 mΩ on-resistance range. The 750 V and 1200 V discrete SiC MOSFET series are suitable for industrial and automotive applications, such as on-board charger (OBC), on-board DC/DC converter, auxiliary inverter and uninterruptible power supply (UPS). The 1700 V and 2000V discrete SiC MOSFET are suitable for energy storage system, high-speed charging station and photovoltaics applications.
