The recent data from global patent database incoPat shows that YASC ranks among the top three patent holders in the industry with its silicon carbide (SiC) trench MOSFET-related patents disclosed by the company as an applicant and takes the first spot by the number of relevant patents published in China.1 This achievement underscores YASC’s technological innovation strength and market competitiveness in SiC power devices.

YASC figured in the top three patent holders in the industry with 79 SiC trench MOSFET-related patents published over the past year, comparable to industry leaders such as Fuji Electric and Infineon, according to the search data.

YASC came second and seventh among global SiC module and SiC device patent applicants in the first quarter of 2025, according to a third-party survey by KnowMade. This is a testament to the company forging ahead by adhering to the innovation-driven development philosophy.

SiC trench MOSFETs, the new generation of core power semiconductor devices, are widely used in new energy vehicles (NEV), industrial power supplies and renewable energy for their high efficiency, high power density and excellent high-temperature performance. As the global demand for high-efficiency, low-power technology grows, the development and application of SiC devices has become the focus of competition in the industry.

YASC has always regarded IP strategy as a vital component of core competitiveness since its inception, and continuously deepened its patent layout in relevant fields. In the SiC trench MOSFET domain, YASC has made multiple significant achievements by increasing more in research and development and unremittingly breaking through technological bottlenecks. It has substantially enhanced performance and reliability of SiC trench MOSFETs by optimizing device structures, improving the technology level and innovating design approaches.

YASC had filed 376 patent applications, including 309 invention patent applications (accounting for 82% of the total applications) as of October 2025; obtained 124 patent grants, including 72 invention patents grants, which translates to an impressive 66% grant rate for its invention patent applications. Through its forward-looking IP layout, YASC has nowadays built a patent moat covering core technologies, further solidified its leading position in the SiC power device market, and laid a robust foundation for breaking the industry ceiling and reshaping the global industrial landscape with the “technology—patent—market” closed-loop ecosystem.

Reference:

1: Patent search formula:

PD=[20241001 TO 20251001] AND CLAIM=(Trench OR 沟槽) AND DES=("碳化硅" OR "SiC") AND ((DES=(MOSFET OR 金氧半场效晶体管 OR 金属氧化物半导体) AND TIABC=(功率器件 OR 半导体器件 OR 功率模块 OR "power module" OR "power device" OR "semiconductor device")) OR (TIABC=(MOSFET OR 金氧半场效晶体管 OR 金属氧化物半导体) AND DES=(功率器件 OR 半导体器件 OR 功率模块 OR "power module" OR "power device" OR "semiconductor device"))) NOT TIABC=(鳍 OR fin) NOT DES=(finfet OR GAA) NOT DES=("浅沟槽隔离" OR "shallow trench isolation" OR "浅槽隔离" OR "STI") AND (CPC=(H01L OR H10D OR H10N OR C30B) OR IPC=(H01L OR H10D OR H10N OR C30B)) families combined