The Department of Industry and Information Technology of Anhui Province recently released the Publicity List of the Fifth Batch of “Little Giants” Enterprises that use special, sophisticated technologies to produce novel or unique products. YASC made the list for its rapid development and comprehensive strength in the third-generation semiconductor industry, and was awarded the title of “Little Giant” Enterprise at the national level. This honor is not only a high recognition of YASC in the silicon carbide (SiC) power semiconductor segment, but also the best validation of its comprehensive strength in product research and development, advanced manufacturing and market position.

The “Little Giant” Enterprise that uses special and sophisticated technologies to produce novel and unique products is an honorary award established by China’s Ministry of Industry and Information Technology (MIIT), whose criteria cover indicators in six aspects including specialization, refinement, characteristics, innovation capacity, industrial chain support, and the field to which the leading products belong. The “Little Giants” Enterprise at the national level are outstanding enterprises that uses special and sophisticated technologies to produce novel and unique products, and forerunners that focus on market segments, have strong innovation capacity and high market share, master core technologies in key fields, and boast excellent quality and efficiency.

In the semiconductor field, the third-generation semiconductors represented by silicon carbide have many advantages such as a wide bandgap, high breakdown field strength, high saturation electron drift rate and strong radiation resistance. Compared with the first-generation silicon-based materials, they are more suitable for high-voltage, high-temperature and high-frequency environments, and the application areas can cover high-power density industries like new energy vehicles (NEVs), high-voltage power transmission and transformation, photovoltaics (PV), energy storage and rail transit. YASC, one of the earliest manufacturers that have researched and developed SiC devices in China, has always been committed to independent research, development and innovation of domestic silicon carbine.

YASC has continuously ramped up efforts to make breakthroughs on core technologies in key areas since its inception in 2018, managed to conduct a major strategic transformation from foundry to the IDM model, and formed the complete capabilities in the industrial chain from epitaxial growth, device design and wafer fabrication to module assembly and test. In the meanwhile, the company has expanded its annual production scale, and will provide important support for the development of new energy vehicle, photovoltaics and energy storage, and power grid industries in China.

At the dawn of the era of 800V high-voltage fast charging on new energy vehicles, the silicon carbide market will usher in explosive growth in the coming years. Looking ahead, YASC will constantly focus on making targeted progress in SiC power semiconductors, step up breakthroughs on core technologies in key areas, promote the large-scale application and implementation of SiC power devices in the Chinese new energy vehicle field, and drive the SiC industry to move forward at an accelerated speed.